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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. * Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40% (Typ) * Superior High Order IMD * IMD(d3) (150 W PEP) -- -30 dB (Typ) * IMD(d11) (150 W PEP) -- -60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR MRF140 150 W, to 150 MHz N-CHANNEL MOS LINEAR RF POWER FET D G S CASE 211-11, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 40 16 300 1.7 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 5.0 1.0 Vdc mAdc Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 10 Adc) Forward Transconductance (VDS = 10 V, ID = 5.0 A) VGS(th) VDS(on) gfs 1.0 0.1 4.0 3.0 0.9 7.0 5.0 1.5 -- Vdc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 450 400 75 -- -- -- pF pF pF FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) (30 MHz) (150 MHz) Gps -- -- -- 15 6.0 40 -- -- -- dB % Drain Efficiency (VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 6.5 A) Intermodulation Distortion (1) (VDD = 28 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) dB IMD(d3) IMD(d11) No Degradation in Output Power -- -- -30 -60 -- -- NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. + BIAS 0-12 V+ 28 V RF OUTPUT L1 C11 R4 C5 C6 C7 C4 DUT T2 C8 L2 C9 + - C10 R1 R3 C2 R2 RF INPUT T1 C3 C12 C2, C5, C6, C7, C8, C9 -- 0.1 F Ceramic Chip or Monolythic with Short Leads C3 -- Arco 469 C4 -- 820 pF Unencapsulated Mica or Dipped Mica with Short Leads C10 -- 10 F/100 V Electrolytic C11 -- 1 F, 50 V, Tantalum C12 -- 330 pF, Dipped Mica (Short leads) L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0 H L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 51 /1.0 W Carbon R3 -- 1.0 /1.0 W Carbon or Parallel Two 2 , 1/2 W Resistors R4 -- 1 k/1/2 W Carbon T1 -- 16:1 Broadband Transformer T2 -- 1:25 Broadband Transformer Figure 1. 30 MHz Test Circuit (Class AB) REV 9 2 25 20 POWER GAIN (dB) 15 10 5 0 Pout , OUTPUT POWER (WATTS) 120 80 40 0 200 160 120 80 40 0 0 1 2 3 4 5 0 10 VDD = 28 V, IDQ = 250 mA 20 30 2 5 10 20 50 100 200 6 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power IMD, INTERMODULATION DISTORTION (dB) -25 150 MHz -30 -35 -40 -45 -30 -35 -40 -45 -50 0 20 40 60 80 100 120 VDD = 28 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz d3 d5 1000 f T, UNITY GAIN FREQUENCY (MHz) 800 600 400 200 0 VDS = 20 V 10 V d5 140 160 Pout, OUTPUT POWER (WATTS PEP) 30 MHz d3 0 5 10 ID, DRAIN CURRENT (AMPS) 15 20 Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency versus Drain Current 10 I DS, DRAIN CURRENT (AMPS) 8 6 4 2 0 VDS = 10 V gfs = 6 mhos 0 2 6 8 4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 10 Figure 6. Gate Voltage versus Drain Current REV 9 3 30 MHz VDD = 28 V IDQ = 250mA Pout = 150 W (PEP) 150 MHz 200 160 150 Zin 50 30 30 7.0 f = 2.0 MHz 150 ZOL* Zo = 10 Ohms 7.0 VDD = 28 V IDQ = 250 mA Pout = 150 W PEP f = 2.0 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC1 + 28 V C10 + C11 BIAS 0-12 V R1 C4 C5 + RFC1 DUT L4 L3 L2 C9 RF INPUT C1 L1 C6 RF OUTPUT C2 C3 R2 D1 C7 C8 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25 pF, Unelco C4 -- 0.1 F, Ceramic C5 -- 1.0 F, 15 WV Tantalum C6 -- 15 pF, Unelco J101 C7 -- 25 pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05 F, Ceramic C11 -- 15 F, 35 WV Electrolytic L1 -- 3/4, #18 AWG into Hairpin L2 -- Printed Line, 0.200 x 0.500 L3 -- 7/8, #16 AWG into Hairpin L4 -- 2 Turns, #16 AWG, 5/16 ID RFC1 -- 5.6 H, Molded Choke RFC2 -- VK200-4B R1, R2 -- 150 , 1.0 W Carbon Figure 8. 150 MHz Test Circuit (Class AB) REV 9 4 AAAAA A A A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAA A A A A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A f MHz 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 100 110 90 80 70 60 50 40 30 0.966 0.964 0.963 0.966 0.965 0.964 0.963 0.960 0.962 0.962 0.960 0.962 0.960 0.958 0.959 0.958 0.958 0.959 0.957 0.958 0.958 0.957 0.957 0.956 0.957 0.957 0.957 0.957 0.956 0.956 0.956 0.957 |S11| S11 5 REV 9 Table 1. Common Source S-Parameters (VDS = 28 V, ID = 5 A) 174 174 174 174 175 175 175 175 175 175 176 176 176 176 176 176 177 177 177 177 177 178 178 178 178 179 179 179 179 180 180 180 |S21| 0.18 0.16 0.18 0.18 0.20 0.19 0.20 0.20 0.21 0.21 0.24 0.24 0.28 0.27 0.27 0.30 0.31 0.34 0.36 0.37 0.41 0.43 0.48 0.55 0.58 0.64 0.73 0.86 1.00 1.17 1.46 1.88 S21 46 42 45 42 42 40 43 44 44 47 44 45 52 54 52 53 51 54 56 59 60 61 64 64 67 71 72 73 76 78 81 86 0.055 0.053 0.049 0.046 0.049 0.046 0.043 0.038 0.036 0.038 0.038 0.039 0.032 0.026 0.024 0.026 0.028 0.026 0.023 0.017 0.016 0.017 0.019 0.018 0.015 0.010 0.012 0.013 0.012 0.010 0.008 0.011 |S12| S12 71 74 74 79 78 74 71 72 77 81 76 70 67 67 77 82 75 67 58 60 73 75 67 53 44 45 53 54 44 33 23 22 0.947 0.930 0.971 1.010 0.945 0.952 0.962 0.980 0.994 0.980 0.988 1.020 0.951 0.988 0.986 0.986 0.974 0.923 0.934 0.978 0.964 0.973 0.961 0.947 0.934 0.952 0.970 0.960 0.936 0.936 0.940 0.938 |S22| S22 -178 169 170 170 172 170 170 172 173 175 175 171 172 175 177 176 175 175 176 178 179 178 178 177 176 178 180 179 177 177 179 179 AAAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAA A A A A A A A AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AA AA A f MHz 500 490 480 470 460 450 440 430 420 410 400 390 380 370 360 350 0.956 0.954 0.958 0.965 0.968 0.969 0.968 0.968 0.969 0.967 0.968 0.968 0.967 0.968 0.967 0.965 |S11| 6 REV 9 Table 1. Common Source S-Parameters (VDS = 28 V, ID = 5 A) continued S11 170 170 170 171 171 171 171 172 172 172 172 173 173 173 173 174 |S21| 0.13 0.13 0.13 0.13 0.14 0.15 0.14 0.13 0.14 0.15 0.15 0.16 0.16 0.15 0.16 0.17 S21 35 37 40 41 48 45 47 45 43 44 42 45 41 43 43 43 0.070 0.041 0.017 0.046 0.076 0.087 0.086 0.078 0.070 0.070 0.069 0.068 0.065 0.063 0.061 0.059 |S12| S12 113 115 75 73 74 68 65 68 72 77 72 70 70 74 74 74 1.040 1.050 1.050 0.980 0.971 0.981 0.953 0.980 0.986 1.000 0.957 0.970 0.952 1.010 1.010 0.964 |S22| S22 162 163 162 163 163 166 166 166 164 165 170 168 168 167 167 169 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Cgd GATE DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cds Cgs SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector Emitter Base V(BR)CES VCBO IC ICES IEBO VBE(on) VCE(sat) Cib Cob hfe RCE(sat) = ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) ID VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r DS(on) = IC REV 9 7 PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 STYLE 2: PIN 1. 2. 3. 4. SOURCE GATE SOURCE DRAIN CASE 211-11 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 9 8 |
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